New Developments in Semiconductor Physics : Proceedings of the Third Summer School, Held at Szeged, Hungary, August 31 – September 4, 1987. 1st ed. 1988

種類:

電子ブック

責任表示:

edited by George Ferenczi, F. Beleznay

出版情報:

Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 1988

著者名:

• Ferenczi, George.
• Beleznay, F.
• SpringerLink (Online service)

シリーズ名:

Lecture Notes in Physics ; 301

ISBN:

9783540391456 [3540391452]    

注記:

Integer quantum hall effect -- Theory of the energy loss rate of hot electrons in 2D systems -- The transport problem -- Cyclotron resonance of quasi-two-dimensional polarons -- On the concentration dependence of the thermal activation energy of impurities in semicondectors -- The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb and GaAS -- Electronic structure of complex defects in silicon -- Electron microscopy in semiconductor physics -- Determination of the lateral defect distribution by SDLTS in GaAs -- Formation of ribbon-like defects during low-temperature annealing of Czochralski-grown silicon -- Band-edge offsets in semiconductor heterojunctions -- Defect dynamics in crystalline and amorphous silicon -- On the diffusion of oxygen in a silicon crystal -- Hexagonal site interstitial related states in silicon -- The diffusion and electronic structure of hydrogen in silicon -- Spectroscopic studies of point defects in silicon and germanium -- Deep levels in C
This volume contains selected papers presented at the summer school on semiconductor physics in Szeged (Hungary). They cover the areas of multilayer growth technology, theory of electron states, transport theory, defect related effects and structural properties of semiconductors. The book addresses physicists as well as engineers.

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