Materials and Reliability Handbook for Semiconductor Optical and Electron Devices. 1st ed. 2013

種類:

電子ブック

責任表示:

edited by Osamu Ueda, Stephen J. Pearton

出版情報:

New York, NY : Springer New York : Imprint: Springer, 2013

著者名:

• Ueda, Osamu.
• Pearton, Stephen J.
• SpringerLink (Online service)

ISBN:

9781461443377 [1461443377]    

注記:

Preface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and

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