Effective Electron Mass in Low-Dimensional Semiconductors. 1st ed. 2013

種類:

電子ブック

責任表示:

by Sitangshu Bhattacharya, Kamakhya Prasad Ghatak

出版情報:

Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2013

著者名:

• Bhattacharya, Sitangshu.
• Ghatak, Kamakhya Prasad.
• SpringerLink (Online service)

シリーズ名:

Springer Series in Materials Science ; 167

ISBN:

9783642312489 [3642312489]    

注記:

Part I: Influence of Light Waves on the Effective Electron Mass (EEM) in Optoelectronic Semiconductors -- Part II: Influence of Quantum Confinement on the EEM in Non-Parabolic Semiconductors -- Part III: The EEM in Quantum Confined Superlattices of Non- Parabolic Semiconductors -- Part IV: Influence of Intense Electric Field on the EEM in Optoelectronic Semiconductors.
This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped sem

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